Etching a substrate: processes – Gas phase etching of substrate
Reexamination Certificate
2007-11-20
2007-11-20
Norton, Nadine G. (Department: 1765)
Etching a substrate: processes
Gas phase etching of substrate
C216S072000, C438S714000, C438S715000, C438S725000, C156S345100, C134S001100, C134S001200, C134S007000, C134S009000, C134S144000, C451S007000, C451S053000, C451S075000, C451S093000, C451S081000, C451S089000
Reexamination Certificate
active
11045666
ABSTRACT:
A method for manufacturing an article having polymeric residue that is to be removed during the manufacture of the article is disclosed. The article is introduced into a controlled environment of a processing tool having one or more processing chambers. Free radicals are generated from one or more reactant gases and introduced into at least one of the one or more processing chambers where they react with the polymeric residue. A cryogenic cleaning medium is supplied into at least one of the one or more processing chambers where the cryogenic cleaning medium removes the polymeric residue present after the free radicals react with the polymeric residue. The reactant gases are selected to facilitate removal of the polymeric residue with the cryogenic cleaning medium. The cryogenic cleaning medium is supplied with a pulsating flow via a nozzle implement that sweeps across the article. The pulsating flow may be generated via a piezo device or a rotating shaft with a hole the periodically enables or interrupts flow through a flow channel.
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Makhamreh Khalid
Tannous Adel George
Angadi Maki
Loudermilk & Associates
Nanoclean Technologies, Inc.
Norton Nadine G.
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