Methods for reducing write time in nonvolatile memory...

Details Methods for reducing write time in nonvolatile memory... Methods for reducing write time in nonvolatile memory...

2007-03-27

2009-02-10

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185140, C365S185180, C365S185290

Reexamination Certificate

active

07489557

ABSTRACT:
A method of operating a non-volatile memory device includes maintaining a write voltage at a predetermined voltage level for programming and/or erasing a memory cell of the non-volatile memory device during a time between execution of consecutive write operations. For example, the write voltage may be activated at the predetermined voltage level responsive to an initial write command, and discharge of the write voltage may be prevented responsive to a signal indicating consecutive write commands. Related devices are also discussed.

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Notice of Allowance corresponding to Korean Patent Application No. 10-2006-0127264 mailed Nov. 30, 2007.

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