Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1996-02-15
1999-09-14
McCamish, Marion
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438720, 438738, H01L 213065
Patent
active
059522445
ABSTRACT:
A method, in a plasma processing chamber, for etching through a selected portion of layers of a wafer stack, which comprises an anti-reflective layer and a metallization layer disposed below the anti-reflective layer. The method comprises the step of etching at least partially through the anti-reflective layer of the wafer stack with a first chemistry that comprises both an etchant chemical and a polymer-forming chemical. Further, the method comprises the step of etching at least partially through the metallization layer of the wafer stack with a second chemistry different from the first chemistry.
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Abraham Susan C.
Chen Peter H.
Yang Jerry
Juska Cheryl
Lam Research Corporation
McCamish Marion
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