Methods for reducing delamination during chemical mechanical...

Details Methods for reducing delamination during chemical mechanical... Methods for reducing delamination during chemical mechanical...

2007-07-17

2007-07-17

Hail, III, Joseph J. (Department: 3723)

Abrading

Precision device or process - or with condition responsive...

Computer controlled

C451S011000, C451S041000, C451S285000, C451S286000, C451S287000, C451S288000

Reexamination Certificate

active

11393278

ABSTRACT:
Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material form thereon in a polishing apparatus having a rotational carrier head and a rotatable platen, wherein the substrate is disposed in the rotational carrier head and the platen has a polishing article disposed thereon, rotating the first carrier head at a first carrier head rotational rate and rotating a platen at a first platen rotational rate, contacting the substrate and the polishing article, accelerating the first carrier head rotational rate to a second carrier head rotational rate and accelerating the first platen rotational rate to a second platen rotational rate, and polishing the substrate at the second carrier head rotational rate and at the second platen rotational rate.

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