Methods for protecting intermediate conductive elements of...

Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – With stress relief

Reexamination Certificate

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C257S666000, C257S667000, C257S668000

Reexamination Certificate

active

07087984

ABSTRACT:
A method for protecting intermediate conductive elements, such as bond wires, of semiconductor device assemblies, includes sequentially fabricating one or more material layers of one or more protective structures to be associated with the intermediate conductive elements. After a first layer is formed, each subsequent layer is superimposed upon, contiguous with, and mutually adhered to an underlying layer of the protective structure.

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