Methods for programming read-only memory cells and associated me

Details Methods for programming read-only memory cells and associated me Methods for programming read-only memory cells and associated me

1996-07-30

2000-11-07

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257402, H01L 2976, H01L 2994

Patent

active

061440787

ABSTRACT:
A method for programming a read-only memory cell including a transistor whose source and drain, which have a second type of doping, are formed in a semiconductor substrate with a first type of doping, includes a step of carrying out a contradoping in a region of the source, the region being adjacent to the conduction channel 4, to make it a region with the first type of doping so as to prevent a transistor effect from occurring.

REFERENCES:
patent: 4282646 (1981-08-01), Fortino et al.
patent: 5200802 (1993-04-01), Miller
French Search Report from French Patent Application 95 09328, filed Jul. 31, 1995.
Patent Abstracts of Japan, vol. 8, No. 221 (E-271)[1658], Oct. 9, 1984 & JP-A-59 103368.

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