Methods for programming read-only memory cells and...

Details Methods for programming read-only memory cells and... Methods for programming read-only memory cells and...

2006-04-04

2006-04-04

Loke, Steven H. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S402000, C257S403000, C257S404000

Reexamination Certificate

active

07023060

ABSTRACT:
A method for programming a read-only memory cell including a transistor whose source and drain, which have a second type of doping, are formed in a semiconductor substrate with a first type of doping, includes a step of carrying out a contradoping in a region of the source, the region being adjacent to the conduction channel4, to make it a region with the first type of doping so as to prevent a transistor effect from occurring.

REFERENCES:
patent: 4282646 (1981-08-01), Fortino et al.
patent: 5200802 (1993-04-01), Miller
patent: 6144078 (2000-11-01), Fournel
patent: A-0 213 983 (1987-03-01), None
French Search Report from French Patent Application 95 09328, filed Jul. 31, 1995.
Patent Abstracts of Japan, vol. 8, No. 221 (E-271)[1658], Oct. 9, 1984 & JP-A-59 103368 (Fujitsu KK).

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