Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-12-19
2011-11-15
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S795000, C257SE21214
Reexamination Certificate
active
08058173
ABSTRACT:
Methods for reducing the surface roughness of semiconductor wafers through a combination of rough polishing and thermally annealing the wafer.
REFERENCES:
patent: 5744401 (1998-04-01), Shirai et al.
patent: 6294469 (2001-09-01), Kulkarni et al.
patent: 6362076 (2002-03-01), Inazuki et al.
patent: 6372609 (2002-04-01), Aga et al.
patent: 6391796 (2002-05-01), Akiyama et al.
patent: 6573159 (2003-06-01), Kobayashi et al.
patent: 6899762 (2005-05-01), Wenski et al.
patent: 6903032 (2005-06-01), Maleville et al.
patent: 6962858 (2005-11-01), Neyret et al.
patent: 7008860 (2006-03-01), Kakizaki et al.
patent: 1041612 (2000-10-01), None
patent: 2851372 (2004-08-01), None
patent: 2001326228 (2001-11-01), None
Yanase et al., “Atomic Force Microscopy Observation of Si(100) Surface after Hydrogen Annealing,” J. Electrochem. Soc., Nov. 1994, vol. 141, No. 11, pp. 3259-3263.
Zhong et al. “Atomic Steps on a Silicon (001) Surface Tilted Toward an Arbitrary Direction,” Appl. Phys. Lett, 1996, vol. 68, No. 13, pp. 1823-1825.
International Search Report for analogous Application No. PCT/US/2007/087633 dated Jun. 3, 2008.
Gilmore Brian L.
Shive Larry W.
Armstrong Teasdale LLP
Diallo Mamadou
MEMC Electronic Materials , Inc.
Richards N Drew
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