Methods for producing low-k CDO films

Details Methods for producing low-k CDO films Methods for producing low-k CDO films

2004-03-11

2008-03-11

Chen, Bret (Department: 1762)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S249100, C427S579000, C438S787000, C438S788000, C438S789000, C438S790000

Reexamination Certificate

active

07341761

ABSTRACT:
Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon—carbon triple bond, or carbon—carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has a dielectric constant of not greater than about 2.7.

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