Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2008-07-25
2010-06-08
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S041000, C438S341000, C257SE21090, C257SE21097, C257SE21461
Reexamination Certificate
active
07732306
ABSTRACT:
This invention provides methods for fabricating substantially continuous layers of group III nitride semiconductor materials having low defect densities. The methods include epitaxial growth of nucleation layers on a base substrate, thermally treatment of said nucleation layer and epitaxial growth of a discontinuous masking layer. The methods outlined promote defect reduction through masking, annihilation and coalescence, therefore producing semiconductor structures with low defect densities. The invention can be applied to a wide range of semiconductor materials, both elemental semiconductors, e.g., combinations of Si (silicon) with strained Si (sSi) and/or Ge (germanium), and compound semiconductors, e.g., group II-VI and group III-V compound semiconductor materials.
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Arena Chantal
Datta Ranjan
Mahajan Subhash
S.O.I.Tec Silicon on Insulator Technologies
Thai Luan C
Winston & Strawn LLP
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