Methods for producing a highly doped electrode for a field...

Details Methods for producing a highly doped electrode for a field... Methods for producing a highly doped electrode for a field...

2005-04-05

2005-04-05

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C438S303000, C438S560000, C438S582000

Reexamination Certificate

active

06875676

ABSTRACT:
A highly localized diffusion barrier is incorporated into a polysilicon line to allow the doping of the polysilicon layer without sacrificing an underlying material layer. The diffusion barrier is formed by depositing a thin polysilicon layer and exposing the layer to a nitrogen-containing plasma ambient. Thereafter, the deposition is resumed to obtain the required final thickness. Moreover, a polysilicon line is disclosed, having a highly localized barrier layer.

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patent: 6017808 (2000-01-01), Wang et al.
patent: 6380055 (2002-04-01), Gardner et al.
patent: 10163485 (1998-06-01), None

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