Methods for processing semiconductors to reduce surface particle

Details Methods for processing semiconductors to reduce surface particle Methods for processing semiconductors to reduce surface particle

1995-02-21

1996-02-06

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566511, 1566621, 134 3, 134 4, 134 28, H01L 2100

Patent

active

054895570

ABSTRACT:
Methods for removing particulates from the surfaces of semiconductor materials, such as silicon substrates and wafers. The methods use repeated oxide growth steps and intervening oxide removal. Rinses are preferably used between the oxide growth and removal steps, such as with purified water. The oxide growth steps use an oxidation agent and a base, for example hydrogen peroxide and ammonium hydroxide. The oxide removal steps use a suitable oxide removal agent such as a hydrogen halide acid, for example hydrogen fluoride.

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Yuji Takakuwa et al.; "Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light"; pp. 1274-1277 Japanese Journal of Applied Physics, 28 (1989) Jul., Part 2, Tokyo, JP.

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