Methods for post offset spacer clean for improved selective...

Details Methods for post offset spacer clean for improved selective... Methods for post offset spacer clean for improved selective...

2007-07-10

2007-07-10

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S341000, C257SE21090, C257SE21020

Reexamination Certificate

active

10969769

ABSTRACT:
A gate structure is formed overlying a substrate. A source/drain region of the substrate is exposed to a soluction comprising ammonium hydroxide, hydrogen peroxide, and deionized water to etch an upper-most semiconductor porton of the source/drain region.

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