Methods for post-etch deposition of a dielectric film

Details Methods for post-etch deposition of a dielectric film Methods for post-etch deposition of a dielectric film

2006-02-01

2008-07-01

Deo, Duy-Vu N. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S694000, C438S738000, C438S743000, C438S778000, C438S781000, C134S016000, C134S017000, C134S025300, C216S049000, C216S072000, C216S080000

Reexamination Certificate

active

07393795

ABSTRACT:
Methods for post-etch deposition on a dielectric film are provided in the present invention. In one embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in a etch reactor, etching the low-k dielectric layer in the etch reactor, and forming a protection layer on the etched low-k dielectric layer. In another embodiment, the method includes providing a substrate having a low-k dielectric layer disposed thereon in an etch reactor, etching the low-k dielectric layer in the reactor, bonding the etched low-k dielectric layer with a polymer gas supplied into the reactor, forming a protection layer on the etched low-k dielectric layer, and removing the protection layer formed on the etched low-k dielectric layer.

REFERENCES:
patent: 6054769 (2000-04-01), Jeng
patent: 6607675 (2003-08-01), Hsieh et al.
patent: 2004/0160556 (2004-08-01), Chiang et al.
patent: 2004/0180556 (2004-09-01), Chiang et al.
patent: 2005/0009356 (2005-01-01), Kojima et al.
Shamiryan, Journal of Vacuum Science and Technology, B 20(5), Sep./Oct. 2002, pp. 1923-1928.

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