Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-03-27
2007-03-27
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C257SE21230
Reexamination Certificate
active
11084228
ABSTRACT:
A method and system for improving planarization and uniformity of dielectric layers for providing improved optical efficiency in CCD and CMOS image sensor devices. In various embodiments, a dielectric planarization method for achieving better optical efficiency includes first depositing a first dielectric having an optically transparent property on and around a metal pattern. Optical sensors are formed in or on the substrate in areas between metal features. The metal pattern protects a sensor situated therebetween and thereunder from electromagnetic radiation. After the first dielectric layer is polished using CMP, a slanted or inclined surface is produced but this non-uniformity is eliminated using further planarization processes that produce a uniform total dielectric thickness for the proper functioning of the sensor.
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Hsieh Yeou-Lang
Lin Chin-Min
Wang Jiann-Jong
Kirkpartick & Lockhart Preston Gates Ellis LLP
Sarkar Asok Kumar
Taiwan Semiconductor Manufacturing Co. Ltd.
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