Methods for patterning microelectronic structures using chlorine

Details Methods for patterning microelectronic structures using chlorine Methods for patterning microelectronic structures using chlorine

1997-01-15

2000-07-11

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438710, 438711, 438712, 438714, H01L 213056

Patent

active

060872640

ABSTRACT:
A method for forming a gate structure on a semiconductor substrate includes the following steps. A layer of a gate material is formed on the semiconductor substrate, and a patterned mask layer is formed on the layer of the gate material opposite the substrate. The layer of the gate material is then etched with an etching gas including a mixture of chlorine gas (Cl.sub.2) and oxygen gas (O.sub.2) using the patterned mask layer as an etching mask. In particular, the step of forming the layer of the gate material can include the steps of forming a polysilicon layer on a surface of the semiconductor substrate, and forming a silicide layer on the polysilicon layer opposite the substrate.

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