Methods for monitoring a chemical mechanical planarization...

Details Methods for monitoring a chemical mechanical planarization... Methods for monitoring a chemical mechanical planarization...

2007-09-04

2007-09-04

Wilson, Lee (Department: 3723)

Abrading

Precision device or process - or with condition responsive...

With indicating

C451S006000, C451S041000

Reexamination Certificate

active

11499443

ABSTRACT:
Methods are provided for monitoring a CMP process. An exemplary method comprises generating a plurality of thickness measurements of a metal layer using an in-situ eddy current measuring system. The thickness measurements are analyzed to derive a plurality of work piece metrics and the work piece metrics are assessed to determine if a predetermined number is within a predetermined specification. A signal is generated if the predetermined number of the work piece metrics is outside the predetermined specification.

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