Methods for minimizing as-deposited stress in tungsten silicide

Details Methods for minimizing as-deposited stress in tungsten silicide Methods for minimizing as-deposited stress in tungsten silicide

1996-12-03

1999-10-05

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438680, 438683, 438648, H01L 2144

Patent

active

059638362

ABSTRACT:
Processing of substrates in a CVD reactor system wherein tungsten silicide is deposited is accomplished with preflow and postflow of reducing gases before and after deposition steps to ensure that tungsten-rich film is not deposited at the interface of the tungsten silicide film to the substrates or on the tungsten silicide film at the end of deposition processing. For systems having a remote gas injection and flow control system connected by a gas supply manifold to a CVD reactor chamber, an isolation valve is provided in the gas supply manifold, and the valve is held closed during at least a portion of time between deposition sequences.

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