Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Reexamination Certificate
2007-06-12
2007-06-12
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
C438S149000, C438S588000, C438S782000, C438S780000, C257SE21415, C257SE21442
Reexamination Certificate
active
10906881
ABSTRACT:
A method of metal plating a gate conductor on a semiconductor is provided. The method includes defining an organic polymer plating mandrel on the semiconductor, activating one or more sites of the organic polymer plating mandrel, and binding a seed layer to the one or more of the activated sites. A metallic conductive material can then be plated on the seed layer to form the gate conductor. Semiconductor devices having a gate conductor plated thereon to a width of between about 1 to about 7 nanometers are also provided.
REFERENCES:
patent: 2003/0113970 (2003-06-01), Fried et al.
U.S. Appl. No. 10/906,876 Title: Methods For Providing Gate Conductors On Semiconductors And Semiconductors Formed Thereby Applicant(s): Holmes, et al. Filed: Mar. 10, 2005.
Furukawa Toshiharu
Hakey Mark C.
Holmes Steven J.
Horak David V.
Koburger, III Charles W.
Capella, Esq. Steven
International Business Machines - Corporation
Lebentritt Michael
Lee Kyoung
Ohlandt Greeley Ruggiero & Perle L.L.P.
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