Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Reexamination Certificate
2005-03-15
2005-03-15
Young, Christopher G. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
C430S030000, C430S313000, C438S014000, C438S016000
Reexamination Certificate
active
06866988
ABSTRACT:
A new and improved method for measuring dimensions of a photoresist pattern profile on a wafer substrate during photolithography for the fabrication of integrated circuits on the substrate. According to one embodiment, the method includes fixing the photoresist pattern profile on the substrate using a spin-on glass (SOG) procedure. In another embodiment, the method includes fixing the photoresist pattern profile on the substrate using a sputter oxide (SO) procedure. The fixed photoresist pattern is then subjected to a microscopy procedure, typically transmission electron microscopy (TEM), to measure the exact linewidth and other dimensions of the profile. The method prevents distortion of the profile during fixation and facilitates an accurate determination of the profile dimensions.
REFERENCES:
patent: 20040018648 (2004-01-01), Lu et al.
Chen Kuei-Shun
Chu Hong-Yuan
Lin Hua-Tai
Lu Shyue-Sheng
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung & Associates
Young Christopher G.
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