Methods for manufacturing stacked gate structure and field...

Details Methods for manufacturing stacked gate structure and field... Methods for manufacturing stacked gate structure and field...

2006-09-05

2006-09-05

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257S413000

Reexamination Certificate

active

07101777

ABSTRACT:
The present invention provides a method for manufacturing a stacked-gate structure in a semiconductor device. The method includes the steps of sequentially forming a gate dielectric layer, a poly-silicon layer, a titanium layer, and a WNXlayer on a semiconductor substrate, carrying out a rapid thermal annealing (RTA) in a nitrogen ambient, forming a silicon nitride layer on the tungsten layer, and patterning the multilayer thin-film structure into a predetermined configuration.

REFERENCES:
patent: 6277719 (2001-08-01), Chern et al.
patent: 6306743 (2001-10-01), Lee
patent: 6800543 (2004-10-01), Taguwa

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