Methods for manufacturing silicon wafer and silicone...

Details Methods for manufacturing silicon wafer and silicone... Methods for manufacturing silicon wafer and silicone...

2006-04-25

2006-04-25

Geyer, Scott (Department: 2812)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

By differential heating

Reexamination Certificate

active

07033962

ABSTRACT:
There is provided a method for manufacturing a silicon wafer or a silicon epitaxial wafer capable of imparting an excellent IG capability thereto in a stable manner by simultaneously realizing higher density of oxide precipitates and larger sizes thereof at a stage prior to a device fabrication process. The present invention is a method for manufacturing a silicon wafer wherein the silicon wafer is subjected to heat treatment to impart a gettering capability thereto comprising at least the following three steps of: a temperature raising step A for generating oxygen precipitation nuclei; a temperature raising step B for growing the oxygen precipitation nuclei; and a constant temperature keeping step C for growing the oxygen precipitation nuclei into oxide precipitates of larger sizes.

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Masanori Akatsuka et al.; Effect of Oxide Precipitate Size on Slip Generation in Large Diameter Epitaxial Wafers;Japanese Journal of Applied Physics; vol. 37 (1998) pp. 4663-4666.

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