Methods for manufacturing semiconductor devices

Details Methods for manufacturing semiconductor devices Methods for manufacturing semiconductor devices

2006-02-14

2006-02-14

Tran, Mai-Huong (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S105000, C438S257000, C438S285000, C438S593000, C438S931000

Reexamination Certificate

active

06998300

ABSTRACT:
A multiple layered wafer structure having, on a semiconductor substrate, a first dielectric layer, a single crystal semiconductor layer formed on the dielectric layer, a semiconductor nano-crystal layer formed on the single crystal semiconductor layer, and a second dielectric layer formed on the semiconductor nano-crystal layer. A laser is irradiated from the side of the second dielectric layer, to thereby separate the second dielectric layer from the others of the multiple layered wafer structure.

REFERENCES:
patent: 6746893 (2004-06-01), Forbes et al.

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