Methods for manufacturing MEMS sensor and thin film thereof...

Details Methods for manufacturing MEMS sensor and thin film thereof... Methods for manufacturing MEMS sensor and thin film thereof...

2011-08-16

2011-08-16

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S048000, C438S050000, C438S052000, C257S419000, C257SE21001, C257SE27122

Reexamination Certificate

active

07998776

ABSTRACT:
A method for manufacturing a MEMS sensor and a thin film thereof includes steps of etching a top surface of a single-crystal silicon wafer in combination of a deposition process, an isotropic DRIE process, a wet etching process and a back etching process in order to form a pressure-sensitive single-crystal silicon film, a cantilever beam, a mass block, a front chamber, a back chamber and trenches connecting the front and the back chambers. The single-crystal silicon film is prevented from etching so that the thickness thereof can be well controlled. The method of the present invention can be used to replace the traditional method which forms the back chamber and the pressure-sensitive single-crystal silicon film from the bottom surface of the silicon wafer.

REFERENCES:
patent: 7242089 (2007-07-01), Minervini
patent: 7354786 (2008-04-01), Benzel et al.
patent: 7630589 (2009-12-01), Kilic et al.
patent: 7645627 (2010-01-01), Christenson et al.
patent: 2009/0278628 (2009-11-01), Sworowski et al.

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