Methods for manufacturing an active matrix display device

Details Methods for manufacturing an active matrix display device Methods for manufacturing an active matrix display device

2008-07-29

2008-07-29

Smith, Bradley K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000, C438S510000, C438S515000, C257SE21582

Reexamination Certificate

active

07405111

ABSTRACT:
The present invention is to carry out stable doping and to prevent the drastic pressure change in a treatment chamber by reducing degasification of resist during adding impurities. In the present invention, the stability of the impurity ion injection can be ensured by reducing degasification of resist by reducing the area (resist area proportion, that is, the ratio of the area of resist to the whole area of a substrate) of resist pattern which is used depending on the conditions such as acceleration voltage or current density of a doping process.

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Specification, claims, abstract and drawings of U.S. Appl. No. 10/345,401 entitledMethod of Introducing lon and Method of Manufacturing Semiconductor Devicefiled Jan. 16, 2003.

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