Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2007-08-17
2009-11-10
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S455000, C257SE21567, C257SE21568, C257SE21569, C257SE21570
Reexamination Certificate
active
07615468
ABSTRACT:
A method for making substrates for use in optics, electronics, or opto-electronics. The method may include transferring a seed layer onto a receiving support and depositing a useful layer onto the seed layer. The thermal expansion coefficient of the receiving support may be identical to or slightly larger than the thermal expansion coefficient of the useful layer and the thermal expansion coefficient of the seed layer may be substantially equal to the thermal expansion coefficient of the receiving support. Preferably, the nucleation layer and the intermediate support have substantially the same chemical composition.
REFERENCES:
patent: 5229305 (1993-07-01), Baker
patent: 5374564 (1994-12-01), Bruel
patent: 5759908 (1998-06-01), Steckl et al.
patent: 5869387 (1999-02-01), Sato et al.
patent: 5877070 (1999-03-01), Goesele et al.
patent: 5880491 (1999-03-01), Soref et al.
patent: 5953622 (1999-09-01), Lee et al.
patent: 5985687 (1999-11-01), Bowers et al.
patent: 6020252 (2000-02-01), Aspar et al.
patent: 6103597 (2000-08-01), Aspar et al.
patent: 6114188 (2000-09-01), Oliver et al.
patent: 6190998 (2001-02-01), Bruel et al.
patent: 6225192 (2001-05-01), Aspar et al.
patent: 6251754 (2001-06-01), Ohshima et al.
patent: 6303468 (2001-10-01), Aspar et al.
patent: 6328796 (2001-12-01), Kub et al.
patent: 6426270 (2002-07-01), Sakaguchi et al.
patent: 6534382 (2003-03-01), Sakaguchi et al.
patent: 6756286 (2004-06-01), Moriceau et al.
patent: 6794276 (2004-09-01), Letertre et al.
patent: 6867067 (2005-03-01), Ghyselen et al.
patent: 6946317 (2005-09-01), Faure et al.
patent: 7029993 (2006-04-01), Barge et al.
patent: 2003/0143772 (2003-07-01), Chen
patent: 2003/0219959 (2003-11-01), Ghyselen et al.
patent: 2004/0029359 (2004-02-01), Letertre et al.
patent: 2004/0235268 (2004-11-01), Letertre et al.
patent: 2005/0026394 (2005-02-01), Letertre et al.
patent: 2005/0266626 (2005-12-01), Faure et al.
patent: 2007/0072324 (2007-03-01), Krames et al.
patent: 2 681 472 (1993-03-01), None
patent: 2 774 214 (1999-07-01), None
patent: 2 787 919 (2000-06-01), None
patent: 2 840 730 (2003-12-01), None
patent: WO 00/44966 (2000-08-01), None
patent: WO 02/37556 (2002-05-01), None
patent: WO 02/43112 (2002-05-01), None
patent: WO 02/43124 (2002-05-01), None
Aspar et al., “Smart-Cut® process using metallic bonding: application to transfer of Si, GaAs, InP thin films,” Electronics Letters, 35(12): 1024-1025 (1999).
Bruel, “Silicon on insulator material technology,” Electronics Letters, 31(14): 1201-1202 (1995).
Hobart et al., “Transfer of ultrathin silicon layers to polycrystalline SiC substrates for the growth of 3C-Sic epitaxial films,” J. Electrochem. Soc., 146(10): 3833-3836 (1999).
MacKenzie et al., “Growth of III-Nitrides on ZnO, LiGaO2, and LiA1O2substrates,” J. Electrochem. Soc., 145(7): 2581-2585 (1998).
Motoki et al., “Preparation of large freestanding GaN substrates by hydride vapor phase epitaxy using GaAs as a starting substrate,” Jpn. J. Appl. Phys., 40(2B): L140-L143 (2001).
Oda et al., “GaN bulk substrates for GaN based LEDs and LDs,” Phys. Stat. Sol. (A), 180(1): 51-58 (2000).
Popovici et al., “Impurity contamination of GaN epitaxial films from the sapphire, SiC, and ZnO substrates,” Appl. Phys. Lett., 71(23): 3385-3387 (1997).
Schnitzer et al., “30% external quantum efficiency from surface textured, thin-film light-emitting diodes,” Appl. Phys. Lett. 63(16): 2174-2176 (1993).
Steckl et al., “Growth and characterization of GaN thin films on SiC SOI substrates,” Journal of Electronic Materials, 26(3): 217-223 (1997).
Zahler et al., “Ge layer transfer to Si for photovoltaic applications,” Thin Solid Films, 403-404: 558-562 (2002).
Boussagol Alice
Faure Bruce
Ghyselen Bruno
Letertre Fabrice
Rayssac Olivier
S.O.I.Tec Silicon on Insulator Technologies
Thai Luan C
Winston & Strawn LLP
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