Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Patent
1999-01-20
2000-12-26
Bowers, Charles
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
438637, 438639, B05D 302
Patent
active
061659053
ABSTRACT:
Disclosed is a method of making a reliable via hole in a semiconductor device layer, and a reliable via structure having internal wall surface layers that are hydrophobic, and thereby are non-moisture absorbing. The inner wall of the via structure has a layer of material having a characteristic of spin on glass (SOG), such that the characteristic is that the outer layer of the SOG oxidizes during photoresist ashing to form a surface layer of silicon dioxide in the via hole wall. In the method, the via structure is placed through a chemical dehydroxylation operation after the ashing operation, such that the layer of silicon dioxide in the via hole wall is converted into a hydrophobic material layer. The conversion is performed by introducing a halogen compound suitable for the chemical hydroxilation operation, wherein the halogen compound may be NH.sub.4 F or CCl.sub.4.
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Bowers Charles
Kilday Lisa
Philips Electronics North America Corp.
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