Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-02
2005-08-02
Nguyen, Van Thu (Department: 2824)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S625000, C438S627000, C438S628000, C438S637000, C438S641000, C438S642000, C438S643000
Reexamination Certificate
active
06924226
ABSTRACT:
One embodiment of the present invention is a method for making metallic interconnects, which method is utilized at a stage of processing a substrate having a patterned insulating layer which includes at least one opening and a field surrounding the at least one opening, the field and the at least one opening being ready for depositing of one or more seed layers, which method includes steps of: (a) depositing a substantially conformal seed layer over the field and inside surfaces of the at least one opening; (b) depositing a substantially non-conformal seed layer over the substantially conformal seed layer, said substantially non-conformal seed layer being thicker than said substantially conformal seed layer over the field, wherein the substantially conformal and the substantially non-conformal seed layers do not seal the at least one opening; and (c) electroplating a metallic layer over the substantially non-conformal seed layer, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.
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Nguyen Van Thu
Wilson Christian D.
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