Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-09-04
2007-09-04
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S597000, C438S610000, C438S508000, C438S508000, C257SE21497
Reexamination Certificate
active
11510102
ABSTRACT:
Disclosed are methods for making microwave circuits using thickfilm components. In an embodiment, the method includes depositing a dielectric over a ground plane, and then forming a conductor on the dielectric. The conductor is formed by depositing a conductive thickfilm on the dielectric and then “subsintering” the conductive thickfilm. In one embodiment, before the subsintering, the conductive thickfilm is patterned to define at least one conductor. In another embodiment, after the subsintering, the conductive thickfilm is patterned to define at least one conductor. After subsintering, the conductive thickfilm is etched to expose the conductor(s), and the conductor(s) are then fired at a full sintering temperature.
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Botka Julius
Casey John F.
Dove Lewis R.
Drehle James R.
Johnson Rosemary O.
Agilent Technologie,s Inc.
Pham Thanh V.
Smith Matthew
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