Methods for making and using halosilylgermanes

Details Methods for making and using halosilylgermanes Methods for making and using halosilylgermanes

2008-04-02

2011-10-25

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S933000, C257SE21182, C257SE21260, C257SE31046, C117S939000, C117S940000

Reexamination Certificate

active

08043980

ABSTRACT:
The invention provides compounds of, and methods for the preparation of compounds of, the molecular formula, SixGeyHz—aXa; wherein X is halogen, and x, y, z, and a are defined herein, and methods for the deposition of high-Ge content Si films on silicon substrates using compounds of the invention.

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