Methods for integrated implant monitoring

Details Methods for integrated implant monitoring Methods for integrated implant monitoring

2007-01-09

2007-01-09

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S510000, C250S491100, C250S492200

Reexamination Certificate

active

10894357

ABSTRACT:
The invention relates to a method for real-time in-situ implantation and measurement incorporating a feedback loop to adjust the implantation dose of a substrate during the manufacturing and testing of semiconductor wafers. During processing, the substrate, such as a silicon wafer, is transported between a measuring device and an implantation device multiple times to ensure that where the beam from the implantation device hits the substrate, the doping concentration falls within the range of desired parameters.

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