Methods for inhibiting outgrowth of silicide in self-aligned sil

Details Methods for inhibiting outgrowth of silicide in self-aligned sil Methods for inhibiting outgrowth of silicide in self-aligned sil

1992-04-06

1993-03-23

Quach, T. N.

Fishing, trapping, and vermin destroying

437200, 748DIG19, 748DIG15, H01L 21366, H01L 21283

Patent

active

051963604

ABSTRACT:
The present invention is directed to methods for preparing silicide contact areas on integrated circuit devices which inhibit outgrowth of silicide and formation of potential short circuit paths between adjacent silicide contact areas. This may be achieved by depositing a nitrogen-rich titanium nitride layer over the conventional titanium layer prior to silicidation. In those regions on the integrated circuit device where titanium is deposited on spacer oxide regions separating adjacent silicide contact areas, excess nitrogen from the nitrogen-rich titanium nitride layer reacts with the titanium film to form titanium nitride. The final structure after silicidation contains titanium silicide contact areas separated by titanium nitride regions. The titanium nitride regions inhibit outgrowth of titanium silicide from the silicide contact areas. After silicidation, excess titanium nitride and titanium may be removed by etching.

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