Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-06-28
2011-06-28
Sandvik, Benjamin P (Department: 2826)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21576
Reexamination Certificate
active
07968450
ABSTRACT:
Methods for fabricating a hybrid interconnect structure that possesses a higher interconnect capacitance in one set of regions than in other regions on the same microelectronic chip. Several methods to fabricate such a structure are provided. Circuit implementations of such hybrid interconnect structures are described that enable increased static noise margin and reduce the leakage in SRAM cells and common power supply voltages for SRAM and logic in such a chip. Methods that enable combining these circuit benefits with higher interconnect performance speed and superior mechanical robustness in such chips are also taught.
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Bhavnagarwala Azeez J.
Kosonocky Stephen V.
Nitta Satyanarayana V.
Purushothaman Sampath
Dougherty Anne Vachon
International Business Machines - Corporation
Morris Daniel P.
Sandvik Benjamin P
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