Methods for in-situ removal of an anti-reflective coating during

Details Methods for in-situ removal of an anti-reflective coating during Methods for in-situ removal of an anti-reflective coating during

1997-12-18

2000-05-23

Hiteshew, Felisa

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438952, H01L 213065

Patent

active

06066567&

ABSTRACT:
A method is provided for removing an bottom anti-reflective coating (BARC) from a transistor gate during the etch back process associated with a resistor protect etch process. The method includes removing a silicon oxynitride BARC, in-situ, during a resistor protect etching process using a plasma formed with CF.sub.4 gas, CHF.sub.3 gas, and Argon (Ar) gas.

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patent: 5700737 (1997-12-01), Yu et al.
patent: 5767018 (1998-06-01), Bell
patent: 5872056 (1999-02-01), Manning
patent: 5902125 (1999-05-01), Wu
patent: 5911887 (1999-06-01), Smoth et al.

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