Methods for growing semiconductors and devices thereof from the

Details Methods for growing semiconductors and devices thereof from the Methods for growing semiconductors and devices thereof from the

1997-04-07

1999-05-18

Chaudhari, Chandra

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

438 46, H01L21/30

Patent

active

059045493

ABSTRACT:
A method is disclosed for growing a nitrogen-containing III-V alloy semiconductor on a semiconductor substrate such as GaAs, which is formed by MOCVD method using nitrogen containing organic compounds having relatively low dissociation temperatures. The alloy semiconductor has a high nitrogen content which exceeds the contents previously achieved, and has a high photoluminescence intensity.
There are also disclosed fabrications of semiconductor devices comprising the alloy semiconductors, such as heterostructure and homo-junction light emitting devices.

REFERENCES:
M. Kondow et al., "GaInNAs: a novel material for long-wavelength semiconductor lasers", IEEE Journal of Selected Topics in Quantum Electronics, vol. 3, No. 3, pp. 719-730, Jun. 1997.

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