Methods for growing semiconductors and devices thereof from...

Details Methods for growing semiconductors and devices thereof from... Methods for growing semiconductors and devices thereof from...

2003-06-24

2010-10-26

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

C438S046000

Reissue Patent

active

RE041890

ABSTRACT:
A method is disclosed for growing a nitrogen-containing Ill-V alloy semiconductor on a semiconductor substrate such as GaAs, which is formed by MOCVD method using nitrogen containing organic compounds having relatively low dissociation temperatures. The alloy semiconductor has a high nitrogen content which exceeds the contents previously achieved, and has a high photoluminescence intensity.There are also disclosed fabrications of semiconductor devices comprising the alloy semiconductors, such as heterostructure and homo-junction light emitting devices.

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Alloy Semiconductor Physics and Electronics Symposium, pp. 337-340 N. Ohkouchi, et al. (Jul. 1993) “MOVPE Growth of GaAs1−xNxAlloys”, Twelfth Record of.
Ohkouchi et al., Proceedings of 12thSymposium on Alloy Semiconductor Physics and Electronics, 1993, pp. 337-340.
M. Kondow et al., “GaInNaas: a novel material for long-wavelength semiconductor lasers”, IEEE Journal of Selected Topics in Quantum Electronics, vol. 3, No. 3, pp. 719-730, Jun. 1997.

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