Methods for growing low-resistivity tungsten film

Details Methods for growing low-resistivity tungsten film Methods for growing low-resistivity tungsten film

2009-08-10

2011-11-01

Estrada, Michelle (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S618000, C438S648000, C438S679000, C438S680000, C438S681000, C257SE21170

Reexamination Certificate

active

08048805

ABSTRACT:
Improved methods for depositing low resistivity tungsten films are provided. The methods involve depositing a tungsten nucleation layer on a substrate and then depositing a tungsten bulk layer over the tungsten nucleation layer to form the tungsten film. The methods provide precise control of the nucleation layer thickness and improved step coverage. According to various embodiments, the methods involve controlling thickness and/or improving step coverage by exposing the substrate to pulse nucleation layer (PNL) cycles at low temperature. Also in some embodiments, the methods may improve resistivity by using a high temperature PNL cycle of a boron-containing species and a tungsten-containing precursor to finish forming the tungsten nucleation layer.

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