Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-01-04
2011-01-04
Landau, Matthew C (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S199000, C438S649000, C438S678000, C257SE21165
Reexamination Certificate
active
07863192
ABSTRACT:
One embodiment relates to a method of fabricating an integrated circuit. In the method, p-type polysilicon is provided over a semiconductor body, where the p-type polysilicon has a first depth as measured from a top surface of the p-type polysilicon. An n-type dopant is implanted into the p-type polysilicon to form a counter-doped layer at the top-surface of the p-type polysilicon, where the counter-doped layer has a second depth that is less than the first depth. A catalyst metal is provided that associates with the counter-doped layer to form a catalytic surface. A metal is deposited over the catalytic surface. A thermal process is performed that reacts the metal with the p-type polysilicon in the presence of the catalytic surface to form a metal silicide. Other methods and devices are also disclosed.
REFERENCES:
patent: 6730572 (2004-05-01), Lee et al.
patent: 6905622 (2005-06-01), Padhi et al.
patent: 2006/0258074 (2006-11-01), Visokay et al.
patent: 2007/0184652 (2007-08-01), Frank et al.
Frank Aaron
Gonzalez, Jr. David
Montgomery Clint
Visokay Mark R.
Brady III Wade J.
Franz Warren L.
Hall Jessica
Landau Matthew C
Telecky , Jr. Frederick J.
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