Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2005-09-29
2008-09-30
Sarkar, Asok K (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257SE23075, C428S209000
Reexamination Certificate
active
07429778
ABSTRACT:
There is provided a method for forming wiring or an electrode by coating a substrate with a composition comprising (A) a complex of an amine compound and a hydrogenated aluminum compound and (B) a titanium compound or a composition comprising the complex and (C) metal particles and subjecting the obtained coating film to heating and/or a light treatment. By the method, a film can be formed that uses a conductive film forming composition with which wiring and an electrode that can be suitably used for electronic devices can be formed easily and inexpensively.
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J. K. Ruff, et al., J. Amer. Chem. Soc., vol. 82, pp. 2141-21044, “The Amine Complexes of Aluminum Hydride”, 1960.
G. W. Fraser, et al., J. Chem. Soc., pp. 3742-3749, “Aluminium Hydride Adducts of Trimethylamine: Vibrational Spectra and Structure”, 1963.
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Endo Masayuki
Satoh Takashi
Shinoda, legal representative Naomi
Takeuchi Yasumasa
Wakasaki Tamaki
JSR Corporation
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Sarkar Asok K
Sharp Corporation
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