Methods for forming vias varying lateral dimensions

Details Methods for forming vias varying lateral dimensions Methods for forming vias varying lateral dimensions

2004-08-27

2008-05-27

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S667000, C438S375000, C257SE21597

Reexamination Certificate

active

07378342

ABSTRACT:
Methods for forming vias are disclosed. The methods include providing a substrate having a first surface and an opposing, second surface. A first opening, a second opening, and a third opening are formed in a substrate such that the first opening, the second opening, and the third opening are in communication with each other. A portion of the first opening, the second opening, and the third opening are filled with a conductive material. Semiconductor devices, including the vias of the present invention, are also disclosed. A method of forming semiconductor components, semiconductor components and assemblies resulting therefrom, and an electronic system, including the vias of the present invention, are further disclosed.

REFERENCES:
patent: 4224101 (1980-09-01), Tijburg et al.
patent: 5269880 (1993-12-01), Jolly et al.
patent: 5841196 (1998-11-01), Gupta et al.
patent: 6022797 (2000-02-01), Ogasawara et al.
patent: 6054377 (2000-04-01), Filipiak et al.
patent: 6080664 (2000-06-01), Huang et al.
patent: 6114240 (2000-09-01), Akram et al.
patent: 6400172 (2002-06-01), Akram et al.
patent: 6448644 (2002-09-01), Lin
patent: 6451683 (2002-09-01), Farrar
patent: 6642146 (2003-11-01), Rozbicki et al.
patent: 2002/0038903 (2002-04-01), Tsau
patent: 2003/0020180 (2003-01-01), Ahn et al.
patent: 2005/0260775 (2005-11-01), DiBattista et al.
patent: 2006/0003578 (2006-01-01), Lee et al.
S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era, vol. 1, 2ndedition, Lattice Press, 2000, p. 438.
U.S. Appl. No. 10/403,937, filed Mar. 31. 2003, Farnworth et al.

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