Coating processes – Coating by vapor – gas – or smoke
Reexamination Certificate
2005-03-01
2005-03-01
Chen, Bret (Department: 1762)
Coating processes
Coating by vapor, gas, or smoke
C427S096400
Reexamination Certificate
active
06861094
ABSTRACT:
A method of forming a layer on a micro-device workpiece includes dispensing a first pulse of a first precursor at a first region of the workpiece to flow toward a second region of the workpiece. The second region of the workpiece is located radially outward relative to the first region of the workpiece. The embodiment of this method further includes dispensing a first pulse of a purge gas at the first region of the workpiece to flow toward the second region of the workpiece after terminating the first pulse of the first precursor. Additionally, this embodiment also includes dispensing a second pulse of a first precursor at the second region of the workpiece to flow radially outward concurrently with dispensing the first pulse of a purge gas in the first region of the workpiece. The first pulse of the purge gas is terminated at the first region of the workpiece, and the second pulse of the first precursor is terminated at the second region. At this stage, the method further includes dispensing a first pulse of a second precursor at the first region of the workpiece to flow radially outward toward the second region, and dispensing a second pulse of the purge gas at the second region of the workpiece to flow radially outward concurrently with the first pulse of the second precursor in the first region. A single cycle of the process can further include dispensing a third pulse of the purge gas onto the first region of the workpiece to flow radially outward after terminating the first pulse of the second precursor, and concurrently dispensing a second pulse of the second precursor in the second region to flow radially outward.
REFERENCES:
patent: 5131752 (1992-07-01), Yu et al.
patent: 5200023 (1993-04-01), Gifford et al.
patent: 5377429 (1995-01-01), Sandhu et al.
patent: 5480818 (1996-01-01), Matsumoto et al.
patent: 5589002 (1996-12-01), Su
patent: 5599513 (1997-02-01), Masaki et al.
patent: 5643394 (1997-07-01), Maydan et al.
patent: 5788778 (1998-08-01), Shang et al.
patent: 5792269 (1998-08-01), Deacon et al.
patent: 5851849 (1998-12-01), Comizzoli et al.
patent: 5879459 (1999-03-01), Gadgil et al.
patent: 5908947 (1999-06-01), Vaartstra
patent: 5932286 (1999-08-01), Beinglass et al.
patent: 5968587 (1999-10-01), Frankel
patent: 5972430 (1999-10-01), DiMeo et al.
patent: 6042652 (2000-03-01), Hyun et al.
patent: 6059885 (2000-05-01), Ohashi et al.
patent: 6079426 (2000-06-01), Subrahmanyam et al.
patent: 6109206 (2000-08-01), Maydan et al.
patent: 6139700 (2000-10-01), Kang et al.
patent: 6143659 (2000-11-01), Leem
patent: 6144060 (2000-11-01), Park et al.
patent: 6174377 (2001-01-01), Doering et al.
patent: 6174809 (2001-01-01), Kang et al.
patent: 6203613 (2001-03-01), Gates et al.
patent: 6237529 (2001-05-01), Spahn
patent: 6270572 (2001-08-01), Kim et al.
patent: 6287965 (2001-09-01), Kang et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6305314 (2001-10-01), Sneh et al.
patent: 6329297 (2001-12-01), Balish et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6346477 (2002-02-01), Kaloyeros et al.
patent: 6374831 (2002-04-01), Chandran et al.
patent: 6387185 (2002-05-01), Doering et al.
patent: 6387207 (2002-05-01), Janakiraman et al.
patent: 6428859 (2002-08-01), Chiang et al.
patent: 6450117 (2002-09-01), Murugesh et al.
patent: 6451119 (2002-09-01), Sneh et al.
patent: 6461436 (2002-10-01), Campbell et al.
patent: 6503330 (2003-01-01), Sneh et al.
patent: 6509280 (2003-01-01), Choi
patent: 6534007 (2003-03-01), Blonigan et al.
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6540838 (2003-04-01), Sneh et al.
patent: 6551929 (2003-04-01), Kori et al.
patent: 6562140 (2003-05-01), Bondestam et al.
patent: 6573184 (2003-06-01), Park
patent: 6579372 (2003-06-01), Park
patent: 6579374 (2003-06-01), Bondestam et al.
patent: 6630201 (2003-10-01), Chiang et al.
patent: 6635965 (2003-10-01), Lee et al.
patent: 6638879 (2003-10-01), Hsieh et al.
patent: 20010011526 (2001-08-01), Doering et al.
patent: 20010045187 (2001-11-01), Uhlenbrock
patent: 20020007790 (2002-01-01), Park
patent: 20020043216 (2002-04-01), Hwang et al.
patent: 20020052097 (2002-05-01), Park
patent: 20020073924 (2002-06-01), Chiang et al.
patent: 20020076490 (2002-06-01), Chiang et al.
patent: 20020076507 (2002-06-01), Chiang et al.
patent: 20020076508 (2002-06-01), Chiang et al.
patent: 20020094689 (2002-07-01), Park
patent: 20020100418 (2002-08-01), Sandhu et al.
patent: 20020104481 (2002-08-01), Chiang et al.
patent: 20020108714 (2002-08-01), Doering et al.
patent: 20020127745 (2002-09-01), Lu et al.
patent: 20020144655 (2002-10-01), Chiang et al.
patent: 20020162506 (2002-11-01), Sneh et al.
patent: 20020164420 (2002-11-01), Derderian et al.
patent: 20020195056 (2002-12-01), Sandhu et al.
patent: 20020197402 (2002-12-01), Chiang et al.
patent: 20030023338 (2003-01-01), Chin et al.
patent: 20030027428 (2003-02-01), Ng et al.
patent: 20030027431 (2003-02-01), Sneh et al.
patent: 20030066483 (2003-04-01), Lee et al.
patent: 20030070609 (2003-04-01), Campbell et al.
patent: 20030070617 (2003-04-01), Kim et al.
patent: 20030070618 (2003-04-01), Campbell et al.
patent: 20030075273 (2003-04-01), Kilpela et al.
patent: 20030079686 (2003-05-01), Chen et al.
patent: 20030098372 (2003-05-01), Kim
patent: 20030098419 (2003-05-01), Ji et al.
patent: 20030106490 (2003-06-01), Jallepally et al.
patent: 20030121608 (2003-07-01), Chen et al.
patent: 20030192645 (2003-10-01), Liu et al.
patent: 4-213818 (1992-08-01), None
patent: WO 9906610 (1999-02-01), None
patent: WO 0040772 (2000-07-01), None
patent: WO 0079019 (2000-12-01), None
patent: WO 0245871 (2002-06-01), None
patent: WO 02073329 (2002-09-01), None
patent: WO 03008662 A2 (2003-01-01), None
patent: WO 03016587 (2003-02-01), None
patent: WO 03033762 (2003-04-01), None
patent: WO 03035927 (2003-05-01), None
U.S. Appl. No. 09/805,620, Carpenter et al., filed Mar. 13, 2001.
U.S. Appl. No. 09/810,387, Carpenter et al., filed Mar. 15, 2001.
UC Berkeley Extension, Engineering, “Atomic Layer Deposition,” Dec. 11, 2001, 5 pages, http://www.unex.berkeley.edu/eng/br335/1-1.html.
IPS Integrated Process Systems, Dec. 11, 2001, 1 page, http://www.ips-tech.com/eng/main.htm.
IPS Integrated Process Systems, Nano-ALD, Dec. 11, 2001, 2 pages, http://www.ips-tech.com/eng/pro-p2.htm.
IPS Integrated Process Systems, Nano-ALD, Dec. 11, 2001, 2 pages, http://www.ips-tech.com/eng/pro-p2-2.htm.
Deublin Company, Precision Rotating Unions, Steam Joints and Siphon Systems “Precision Rotating Connections for Water, Steam, Air, Hydraulic, Vacuum, Coolant and Hot Oil Service,” http://www.deublin.com, Feb. 4, 2002, 1 page.
Deublin Company, “Rotating Unions,” http://www.deublin.com/products/rotatingunions.htm, Feb. 4, 2002, 1 page.
Deublin Company, “Sealing,” http://www.deublin.com/products/sealing.htm, Feb. 4, 2002, 2 pages.
Electronics Times, “Atomic Layer Deposition Chamber Works at Low Temperatures,” 2 pages, Dec. 11, 2001, 2001 CMP Europe Ltd., http://www.electronicstimes.com/story/OEG20010719S0042.
The University of Adelaide Australia, Department of Chemistry, Stage 2 Chemistry Social Relevance Projects, “Spectroscopy,” 2 pages, Feb. 9, 2002, http://www.chemistry.adelaide.edu.au/external/Soc-Rel/content/Spectros.htm.
Derderian Garo J.
Sandhu Gurtej
Chen Bret
Micro)n Technology, Inc.
LandOfFree
Methods for forming thin layers of materials on micro-device... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for forming thin layers of materials on micro-device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming thin layers of materials on micro-device... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3368775