Methods for forming small contacts

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S623000, C438S624000, C438S628000, C438S706000, C438S723000, C257S632000, C257S750000, C257S758000, C257S760000, C257SE21035, C257SE21038, C257SE21252, C257SE21257, C257SE21579

Reexamination Certificate

active

07915160

ABSTRACT:
Methods are provided for forming contacts for a semiconductor device. The methods may include depositing various materials, such as polysilicon, nitride, oxide, and/or carbon materials, over the semiconductor device. The methods may also include forming a contact hole and filling the contact hole to form the contact for the semiconductor device.

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