Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-29
2011-03-29
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S623000, C438S624000, C438S628000, C438S706000, C438S723000, C257S632000, C257S750000, C257S758000, C257S760000, C257SE21035, C257SE21038, C257SE21252, C257SE21257, C257SE21579
Reexamination Certificate
active
07915160
ABSTRACT:
Methods are provided for forming contacts for a semiconductor device. The methods may include depositing various materials, such as polysilicon, nitride, oxide, and/or carbon materials, over the semiconductor device. The methods may also include forming a contact hole and filling the contact hole to form the contact for the semiconductor device.
REFERENCES:
patent: 5994216 (1999-11-01), Cheng
patent: 6645797 (2003-11-01), Buynoski et al.
patent: 6864164 (2005-03-01), Dakshina-Murthy et al.
patent: 6878619 (2005-04-01), Kakamu
patent: 6939794 (2005-09-01), Yin et al.
patent: 2005/0059249 (2005-03-01), Hsieh
patent: 08-236475 (1996-09-01), None
A Definition of the term interlevel dielectric from the Semicyclopedia on the STOL (i.e.-Semiconductor Technology Online) Website; web address of http://semitechonline.com/semicyclopedia.htm.
Digh Hisamoto et al., “FinFEAT-A Self-Aligned Double-Gate MOSFET Scalable to 20 nm,” IEEE Transactions on Electron Devices, vol. 47, No. 12, Dec. 2000, pp. 2320-2325.
Yang-Kyu Choi et al., “Sub-20nm CMOS FinFET Technologies,” 2001 IEEE, IEDM, pp. 421-424.
Xuejue Huang et al., “Sub-50 nm P-Channel FinFET,” IEEE Transactions on Electron Devices, vol. 48, No. 5, May 2001, pp. 880-886.
Xuejue Huang et al., “Sub 50-nm FinFET: PMOS,” 199 IEEE, IEDM, pp. 67-70.
Yang-Kyu Choi et al., “Nanoscale CMOS Spacer FinFET for the Terabit ERA,” IEEE Electron Device Letters, vol. 23, No. 1, Jan. 2002, pp. 25-27.
Dakshina-Murthy Srikanteswara
Tabery Cyrus E.
Yang Chih-Yuh
Yu Bin
Globalfoundries Inc.
Harrity & Harrity LLP
Nguyen Dao H
LandOfFree
Methods for forming small contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for forming small contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming small contacts will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2726486