Methods for forming shallow trench isolation structures

Details Methods for forming shallow trench isolation structures Methods for forming shallow trench isolation structures

2006-03-28

2006-03-28

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S424000

Reexamination Certificate

active

07018907

ABSTRACT:
Methods for forming shallow trench isolation structures are disclosed. In a disclosed example, after a trench is formed in a substrate, an oxide layer is formed on sidewalls and a bottom of the trench. Then, a metal or poly-silicon layer is formed on the oxide layer. Next, a portion of the metal or poly-silicon layer is etched such that the oxide layer on the bottom of the trench is exposed, while leaving the metal or poly-silicon layer on the sidewalls of the trench. Finally, a dielectric material layer is deposited to fully fill the trench.

REFERENCES:
patent: 6566228 (2003-05-01), Beintner et al.
patent: 6737336 (2004-05-01), Ueno et al.

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