Methods for forming ruthenium films with β-diketone...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S686000

Reexamination Certificate

active

07049232

ABSTRACT:
Provided are 1) a method for forming a ruthenium film under a single process condition, whereby high adhesion of the ruthenium film to a lower layer is maintained, and 2) a method for manufacturing an metal-insulator-metal (MIM) capacitor using the ruthenium film forming method. The method for forming a ruthenium film includes supplying bis(isoheptane-2,4-dionato)norbornadiene ruthenium at a flow rate of 0.2–1 ccm and oxygen at a flow rate of 20–60 sccm, and depositing the ruthenium film at a temperature of 330–430° C. under a pressure of 0.5–5 Torr using chemical vapor deposition (CVD).

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patent: 2004/0214392 (2004-10-01), Nabatame et al.
patent: 1020010023994 (2001-05-01), None
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patent: 1020030023681 (2003-10-01), None
Notice of Office Action corresponding to Korean Application No. 10-2003-0012044, dated Jan. 25, 2005.

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