Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2006-12-26
2006-12-26
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S411000, C438S780000, C438S781000, C264S004600, C264S004700, C427S213340, C427S427300
Reexamination Certificate
active
07153754
ABSTRACT:
Methods for forming porous insulative materials for use in forming dielectric structures of semiconductor devices are disclosed. Each insulative material may include a first, substantially nonporous state and a second, porous state. When in the first state, the insulative materials may be processed or support layers or structures which are being processed. When in the second state, the insulative materials have a reduced dielectric constant and, thus, increased electrical insulation properties. Semiconductor device structures including layers or other features formed from one of the insulative materials are also disclosed. Methods for forming the insulative material and for causing the insulative material to become porous are also disclosed.
REFERENCES:
patent: 4293634 (1981-10-01), Monosov
patent: 4618504 (1986-10-01), Bosna et al.
patent: 4652467 (1987-03-01), Brinker et al.
patent: 4798691 (1989-01-01), Kasai et al.
patent: 4810675 (1989-03-01), Dejaiffe
patent: 5302456 (1994-04-01), Matsui
patent: 5318797 (1994-06-01), Matijevic et al.
patent: 5354611 (1994-10-01), Arthur et al.
patent: 5436084 (1995-07-01), Haluska et al.
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5492870 (1996-02-01), Wilcox et al.
patent: 5569058 (1996-10-01), Gnade et al.
patent: 5700844 (1997-12-01), Hedrick et al.
patent: 5776990 (1998-07-01), Hedrick et al.
patent: 5801092 (1998-09-01), Ayers
patent: 5955143 (1999-09-01), Wheatley et al.
patent: 6099894 (2000-08-01), Holman
patent: 6156651 (2000-12-01), Havemann
patent: 6163066 (2000-12-01), Forbes et al.
patent: 6171945 (2001-01-01), Mandal et al.
patent: 6255156 (2001-07-01), Forbes et al.
patent: 6270836 (2001-08-01), Holman
patent: 6270846 (2001-08-01), Brinker et al.
patent: 6271273 (2001-08-01), You et al.
patent: 6277765 (2001-08-01), Cheng et al.
patent: 6277766 (2001-08-01), Ayers
patent: 6297459 (2001-10-01), Wojnarowski et al.
patent: 6313518 (2001-11-01), Ahn et al.
patent: 6316833 (2001-11-01), Oda
patent: 6319854 (2001-11-01), Aoi
patent: 6333556 (2001-12-01), Juengling et al.
patent: 6391932 (2002-05-01), Gore et al.
patent: 6495479 (2002-12-01), Wu et al.
patent: 6503850 (2003-01-01), Wallace et al.
patent: 6559070 (2003-05-01), Mandel
patent: 6559071 (2003-05-01), Ramos et al.
patent: 6589889 (2003-07-01), Endisch et al.
patent: 6719932 (2004-04-01), Clikeman et al.
patent: 2003/0008989 (2003-01-01), Gore et al.
patent: 2003/0012942 (2003-01-01), Larsen et al.
patent: 2004/0076806 (2004-04-01), Miyanaga et al.
patent: 2004/0077738 (2004-04-01), Field et al.
patent: 2005/0255710 (2005-11-01), You et al.
patent: 04-106965 (1992-04-01), None
patent: 09-278452 (1997-10-01), None
Bado, Philippe, et al., Clark-MXR, Inc., Micromachining Handbook, Version 2.2 (2001).
Nalaskowski, Jakub, et al., “Preparation of hydrophobic microspheres from low-temperature melting polymeric materials,” J. Adhesion Sci. Technol., vol. 13, No. 1, pp. 1-17 (1999).
Tiarks, Franca, et al., “Preparation of Polymeric Nanocapsules by Miniemulsion Polymerization,” Langmuir 2001, 17, pp. 908-918.
Wolf et al., Silicon Processing for the VSLA Era, vol. 2, pp. 229-236 (Lattice Press, 1990).
Farnworth Warren M.
Jiang Tongbi
Diaz José R.
Jackson Jerome
Micro)n Technology, Inc.
LandOfFree
Methods for forming porous insulators from... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods for forming porous insulators from..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming porous insulators from... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3665030