Methods for forming porous insulator structures on...

Details Methods for forming porous insulator structures on... Methods for forming porous insulator structures on...

2007-10-23

2007-10-23

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C438S790000, C438S780000, C438S787000, C427S213300

Reexamination Certificate

active

10933061

ABSTRACT:
A method for forming a porous insulative structure on a semiconductor device structure includes forming a layer of unconsolidated electrically insulative, or dielectric, material with microcapsules dispersed therethrough on at least a portion of the surface of the semiconductor device structure. The microcapsules may be hollow or include a removable filler. Once the layer has been formed, the unconsolidated material is at least partially consolidated. Filler, if any, may be removed from the microcapsules to provide a porous insulative layer or structure. This layer or structure may be configured to support conductive elements or other features of the semiconductor device.

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