Methods for forming phase changeable memory devices

Details Methods for forming phase changeable memory devices Methods for forming phase changeable memory devices

2006-05-02

2006-05-02

Ngô, Ngân V. (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S096000, C438S099000

Reexamination Certificate

active

07037749

ABSTRACT:
A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.

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Korean Notice to File a Response/Amendment to the Examination Report for Korean Application No. 2003-17694 mailed on May 30, 2005.

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