Methods for forming phase-change memory devices

Details Methods for forming phase-change memory devices Methods for forming phase-change memory devices

2008-04-01

2008-04-01

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45002, C257S004000, C257S042000

Reexamination Certificate

active

11413318

ABSTRACT:
Phase-change memory devices include a phase-change material layer and a first electrode having a contact area therebetween. The contact area extends into a recess of the first electrode to provide current density concentration.

REFERENCES:
patent: 6329666 (2001-12-01), Doan et al.
patent: 6566700 (2003-05-01), Xu
patent: 6791107 (2004-09-01), Gill et al.
patent: 6944945 (2005-09-01), Shipley et al.
patent: 2003/0116794 (2003-06-01), Lowery
patent: 2004/0113181 (2004-06-01), Wicker
patent: 2004/0113232 (2004-06-01), Johnson et al.

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