Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2006-11-14
2006-11-14
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C118S725000, C257SE21598
Reexamination Certificate
active
07135423
ABSTRACT:
Methods for forming ultrashallow junctions in semiconductor wafers include introducing into a shallow surface layer of a semiconductor wafer a dopant material that is selected to form charge carrier complexes which produce at least two charge carriers per complex, and short-time thermal processing of the doped surface layer to form the charge carrier complexes. The short-time thermal processing step may be implemented as flash rapid thermal processing of the doped surface layer, sub-melt laser processing of the doped surface layer, or RF or microwave annealing of the doped surface layer.
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Coleman W. David
Varian Semiconductor Equipment Associates, Inc
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