Methods for forming low-k dielectric films

Details Methods for forming low-k dielectric films Methods for forming low-k dielectric films

2005-08-30

2005-08-30

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S778000

Reexamination Certificate

active

06936537

ABSTRACT:
The use of a polyhedral oligomeric silsesquioxane compound and linking agent to form an ultra low-k dielectric film on semiconductor or integrated circuit surfaces is disclosed. The reaction between the polyhedral oligomeric silsesquioxane compound and linking agent is done in a chemical vapor deposition chamber.

REFERENCES:
patent: 5310583 (1994-05-01), Eckstein et al.
patent: 5376409 (1994-12-01), Kaloyeros et al.
patent: 5429995 (1995-07-01), Nishiyama et al.
patent: 6440876 (2002-08-01), Wang et al.
patent: 6472076 (2002-10-01), Hacker
patent: 0 516 308 (1996-06-01), None
patent: WO 01/29052 (2001-04-01), None
Thermolysis of POSS, Mar. 1996, USA, Mantz.
R. A. Mantz, P. F. Jones, K. P. Chaffee, J. D. Lichtenhan, and J. W. Gilman, “Thermolysis of Polyhedral Oligomeric Silsequioxane (POSS) Macromers and POSS-Siloxane Copolymers,” Chem. Mater., vol. 8, No. 6, 1996, pp. 1250-1259.
Australian Patent Office Written Opinion and Search Report for Application No. SG 200203106-0, mailed Jan. 20, 2004.

Affiliated with

Also associated with

Rating

Methods for forming low-k dielectric films does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Methods for forming low-k dielectric films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods for forming low-k dielectric films will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3456259